Improved response of uni-traveling-carrier photodiodes by carrier injection

被引：51
|
作者：
Shimizu, N [1 ]
Watanabe, N [1 ]
Furuta, T [1 ]
Ishibashi, T [1 ]
机构：
[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
InP/InGaAs; heterostructure; photodiode; 3-dB bandwidth; electro-optic sampling;
D O I：
10.1143/JJAP.37.1424
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 x 10(17) to 2.5 x 10(18) cm(-3). It is found that 3-dB band width increases with the output voltage in the low output region. This enhancement is more prominent for a lower doping level in the photo-absorption layer. From the analysis of the carrier transport in the photo-absorption layer, we attribute the observed enhanced bandwidth as a result of the self-induced electric field associated with carrier injection.
引用
收藏
页码：1424 / 1426
页数：3
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