Improved response of uni-traveling-carrier photodiodes by carrier injection

被引：51
|
作者：
Shimizu, N [1 ]
Watanabe, N [1 ]
Furuta, T [1 ]
Ishibashi, T [1 ]
机构：
[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
InP/InGaAs; heterostructure; photodiode; 3-dB bandwidth; electro-optic sampling;
D O I：
10.1143/JJAP.37.1424
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 x 10(17) to 2.5 x 10(18) cm(-3). It is found that 3-dB band width increases with the output voltage in the low output region. This enhancement is more prominent for a lower doping level in the photo-absorption layer. From the analysis of the carrier transport in the photo-absorption layer, we attribute the observed enhanced bandwidth as a result of the self-induced electric field associated with carrier injection.
引用
收藏
页码：1424 / 1426
页数：3
相关论文
共 50 条
  • [1] Photoresponse characteristics of uni-traveling-carrier photodiodes
    Ishibashi, T
    Furuta, T
    Fushimi, H
    Ito, H
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, 2001, 4283 : 469 - 479
  • [2] High-speed response of uni-traveling-carrier photodiodes
    Ishibashi, T
    Kodama, S
    Shimizu, N
    Furuta, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (10): : 6263 - 6268
  • [3] InP/InGaAs uni-traveling-carrier photodiodes
    Ishibashi, T
    Furuta, T
    Fushimi, H
    Kodama, S
    Ito, H
    Nagatsuma, T
    Shimizu, N
    Miyamoto, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (06): : 938 - 949
  • [4] Ultrafast uni-traveling-carrier photodiodes for measurement and sensing systems
    Ito, H
    Nagatsuma, T
    QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 : 156 - 166
  • [5] Design and fabrication of uni-traveling-carrier InGaAs photodiodes
    Yang, H.
    Daunt, C. L. L. M.
    Gity, F.
    Lee, K.
    Han, W.
    Thomas, K.
    Corbett, B.
    Peters, F. H.
    OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847
  • [6] Design and Analysis of High Speed Uni-traveling-carrier Photodiodes
    Zang, Ge
    Huang, Yongqing
    Luo, Yang
    Duan, Xiaofeng
    Ren, Xiaomin
    2014 12TH INTERNATIONAL CONFERENCE ON OPTICAL INTERNET (COIN), 2014,
  • [7] Photonic terahertz-wave generation using uni-traveling-carrier photodiodes
    Ito, Hiroshi
    TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS, 2006, 6373
  • [8] Uni-traveling-carrier photodiodes for high-speed detection and broadband sensing
    Ito, Hiroshi
    Nagatsuma, Tadao
    Ishibashi, Tadao
    QUANTUM SENSING AND NANOPHOTONIC DEVICES IV, 2007, 6479
  • [9] Ultrafast applications of uni-traveling-carrier photodiodes from measurement to signal processing
    Nagatsuma, T
    Ito, H
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS VII, 2003, 4992 : 90 - 104
  • [10] Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes
    Bragin, N. N.
    Svetogorov, V. N.
    Ryaboshtan, Yu. L.
    Marmalyuk, A. A.
    Ivanov, A. V.
    Ladugin, M. A.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2024, 51 (SUPPL 2) : S180 - S184
12345