DEVELOPMENT AND APPLICATION OF WIDE BANDWIDTH MAGNETO-RESISTIVE SENSOR BASED EDDY CURRENT PROBE

被引：5
作者：
Wincheski, Buzz [1 ]
Simpson, John [2 ]
机构：
[1] NASA, Langley Res Ctr, Hampton, VA 23681 USA
[2] Lockheed Martin Space Operat, Hampton, VA 23681 USA
来源：
REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION, VOLS 30A AND 30B | 2011年 / 1335卷
关键词：
Eddy Current; Magneto-resistive; high frequency; high resolution;
D O I：
10.1063/1.3591879
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The integration of magneto-resistive sensors into eddy current probes can significantly expand the capabilities of conventional eddy current nondestructive evaluation techniques. The room temperature solid-state sensors have typical bandwidths in the megahertz range and resolutions of tens of microgauss. The low frequency sensitivity of magneto-resistive sensors has been capitalized upon in previous research to fabricate very low frequency eddy current sensors for deep flaw detection in multilayer conductors. In this work a modified probe design is presented to expand the capabilities of the device. The new probe design incorporates a dual induction source enabling operation from low frequency deep flaw detection to high frequency high resolution near surface material characterization. Applications of the probe for the detection of localized near surface conductivity anomalies are presented. Finite element modeling of the probe is shown to be in good agreement with experimental measurements.
引用
收藏
页码：388 / 395
页数：8
相关论文
共 6 条
  • [1] [Anonymous], HONEYWELL SENSOR PRO
  • [2] Jander A., 2005, 10 SPIE C 5770 NVE
  • [3] Using magnetoresistive (MR) sensors for a sensitivity quantum leap in aircraft nondestructive evaluation (NDE)
    Rempt, RD
    [J]. Advanced Sensor Technologies for Nondestructive Evaluation and Structural Health Monitoring, 2005, 5770 : 32 - 45
  • [4] Sikora R, 2003, REV PROG Q, V20, P427, DOI 10.1063/1.1570167
  • [5] Wincheski B, 2000, AIP CONF PROC, V509, P465, DOI 10.1063/1.1306085
  • [6] Wincheski R., 2005, U.S. Patent Number, Patent No. [6,888,346 B2, 6888346]
1