Si field emitter arrays coated with thin ferroelectric films

被引：4

作者：

Chen, X. F. ^{[1
]}

Zhu, W. ^{[2
]}

Lu, H. ^{[2
]}

Pan, J. S. ^{[3
]}

Bian, H. J. ^{[2
]}

Tan, O. K. ^{[2
]}

Sun, C. Q. ^{[2
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Minist Educ, Elect Mat Res Lab, Xian 710049, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

[3] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

CERAMICS INTERNATIONAL | 2008年 / 34卷 / 04期

关键词：

field emission; ferroelectric thin films;

D O I：

10.1016/j.ceramint.2007.09.084

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper demonstrates novel approach on Si field emitter arrays (FEAs) coated with thin ferroelectric films for vacuum microelectronic applications, which exhibit enhanced electron emission behaviors. The films were deposited using sol-gel and sputtering process, respectively. In sol-gel approach, the emission behavior is highly correlated to the crystallinity of (Ba,Sr)TiO3 (BST) layer. The interfacial reaction between Si and BST film would deteriorate the crystallinity of the films, and in turn impede the electron emission from silicon tips. The film thickness and the dopants also affect the emission behaviors significantly. In sputtering process, the nitrogen-incorporated SrTiO3 (STO) films are deposited with eliminated interfacial due to relatively lower processing temperature. The enhanced emission characteristics are highly correlated with nitrogen-incorporation and film thickness. These encouraging results have offered great promise for the application of ferroelectric films in field emission devices. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：971 / 977

页数：7

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