Structure and electrical properties of boron doped hydrogenated mixed-phase silicon films for uncooled microbolometer

被引：19

作者：

Shin, Chonghoon ^{[1
]}

Duy Phong Pham ^{[2
]}

Park, Jinjoo ^{[2
]}

Kim, Sangho ^{[2
]}

Lee, Youn-Jung ^{[2
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

来源：

INFRARED PHYSICS & TECHNOLOGY | 2019年 / 96卷

基金：

新加坡国家研究基金会;

关键词：

Micro-bolometers; Infrared detectors; Boron doped hydrogenated silicon films; Mixed-phase silicon films; AMORPHOUS-SILICON; THIN-FILMS; VAPOR-DEPOSITION; VHF-PECVD; GROWTH; RESISTIVITY; FRACTION;

D O I：

10.1016/j.infrared.2018.10.015

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Boron doped hydrogenated silicon films used as thereto-sensing layers in infrared detectors or uncooled microbolometers are prepared by radio-frequency plasma-enhanced chemical vapor deposition (PECVD). In this work, we investigated TCR (higher the better) and sheet resistance, R-sheet (lower the better), which are important factors for thermos-sensing layer used in uncooled microbolometer. The crystalline volume fraction (X-c) of films is controlled to get silicon films that satisfy the characteristics of high TCR and low Rsheet. Through the control, amorphous, mixed- and microcrystalline phases were identified. As a result, the best TCR and Rsheet were obtained in the mixed-phase. For the films, TRC is around 1-3%/K, R-sheet is around 3-61.4 M Omega/square and X-c is around 7-17%. The 1/f noise is measured for various phases. It is found that 1/f noise of boron doped hydrogenated mixed-phase silicon (BMP-Si:H) is smaller than that of the amorphous phase. The results of BMP-Si:H films show that they are more suitable as thermos-sensing layers than boron doped hydrogenated amorphous silicon films.

引用

页码：84 / 88

页数：5

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