Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

被引:18
|
作者
Shao, Z. G. [1 ]
Chen, D. J. [1 ]
Liu, B. [1 ]
Lu, H. [1 ]
Xie, Z. L. [1 ]
Zhang, R. [1 ]
Zheng, Y. D. [1 ]
机构
[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Sch Elect Sci & Engn, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 05期
关键词
Atomic layer deposition - Semiconductor alloys - Semiconductor insulator boundaries - Gate dielectrics - Photons - Aluminum oxide - III-V semiconductors - Dielectric materials - Interface states - Metals - MIS devices - Alumina - Plasma CVD - Plasma enhanced chemical vapor deposition;
D O I
10.1116/1.3622298
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report on InGaN metal-insulator-semiconductor (MIS) photodetectors with two different insulating layers of Si3N4 and Al2O3 deposited via plasma-enhanced chemical vapor deposition and atomic layer deposition, respectively. The photoresponse spectra show that the metal-Al2O3-InGaN photodetector exhibits an approximately threefold higher photoelectric responsivity and a larger spectral rejection ratio as compared to the metal-Si3N4-InGaN photodetector at a 1 V reverse bias. The current transport mechanisms in MIS photodetectors were investigated in order to determine the difference in photoresponse. The results show that the space charge limited current is a dominant leakage conduction mechanism in the InGaN MIS photodetectors, but this mechanism is mediated by the exponential trap distribution in the metal-Si3N4-InGaN photodetector. This indicates a higher density of trap states in the Si3N4 bulk. A bidirectional Fowler-Nordheim tunneling effect was observed in the metal-Si3N4-InGaN photodetector, which indicates high trap states in the Si3N4 bulk and the Si3N4-InGaN interface. These traps increase the probability of photogenerated carrier recombination in the bulk of the dielectrics and at the interface of dielectric-InGaN, and hence the photoelectric responsivity is lower. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3622298]
引用
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页数:3
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