Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system

被引：9

作者：

Boniardi, Mattia ^{[1
]}

Redaelli, Andrea ^{[1
]}

机构：

[1] Micron Semicond Italia Srl, I-20864 Agrate Brianza, MB, Italy

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 137卷

关键词：

Phase Change Memory; Scaling; Material engineering; GE-SB-TE; DIAGRAM;

D O I：

10.1016/j.mee.2014.09.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Phase Change Memory (PCM) relies on the peculiar properties of a chalcogenide material, able to be reversibly switched between two stable states, namely an amorphous phase, characterized by high electrical resistivity, and a poly-crystalline one, featuring low resistivity. The former is associated to the RESET state of the memory and the latter represents the SET state, thus enabling the storage of digital data. On one hand PCM device scaling is an important step in order to enable denser and low power applications, thanks to the shrink of dimensions and to the reduction of the operating power. On the other hand material engineering may represent a breakthrough in terms of reliability and performance enhancement, owing to the exploitation of the physical and chemical features of different phase change compounds. A smart combination of scaling and material engineering may result into wider application spectrum for PCM. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

共 22 条

[11] Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation
Cho, Eunae
Youn, Yong
Han, Seungwu
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (18)
[12] Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5
Cho, Eunae
Han, Seungwu
Kim, Dohyung
Horii, Hideki
Nam, Ho-Seok
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (04)
[13] Hwang YN, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P893
[14] Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory
Lee, Se-Ho
Jung, Yeonwoong
Agarwal, Ritesh
[J]. NATURE NANOTECHNOLOGY, 2007, 2 (10) : 626 - 630
[15] PHASE-DIAGRAM OF THE TERNARY-SYSTEM GE-SB-TE .1. THE SUBTERNARY GETE-SB2TE3-TE
LEGENDRE, B
CHHAY, HC
BORDAS, S
CLAVAGUERAMORA, MT
[J]. THERMOCHIMICA ACTA, 1984, 78 (1-3) : 141 - 157
[16] Understanding amorphous phase-change materials from the viewpoint of Maxwell rigidity
Micoulaut, M.
Raty, J. -Y.
Otjacques, C.
Bichara, C.
[J]. PHYSICAL REVIEW B, 2010, 81 (17)
[17] Pellizzer F, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P18
[18] Pellizzer F., 2006, S VLSI TECHN, P122
[19] A reliable technique for experimental evaluation of crystallization activation energy in PCMs
Redaelli, A.
Pirovano, A.
Tortorelli, I.
Ielmini, D.
Lacaita, A. L.
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) : 41 - 43
[20] Servalli G., 2009, IEEE INT ELECT DEVIC, P1

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