Infrared reflectivity determination of alloy composition in AlxGa1-xAs and InxGa1-xAs structures

被引:3
|
作者
Engelbrecht, JAA [1 ]
Botha, JR [1 ]
机构
[1] UNIV WESTERN CAPE,DEPT PHYS,ZA-7535 BELLVILLE,SOUTH AFRICA
关键词
infrared reflectance; AlxGa1-xAs; InxGa1-xAs; alloy composition;
D O I
10.1366/0003702971940332
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm(-1). The peak height is found to be linearly dependent on the aluminum content in AlxGa1-xAs layers on GaAs substrates. Previously published spectra for InxGa1-xAs yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm(-1). A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.
引用
收藏
页码:433 / 437
页数:5
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