Infrared reflectivity determination of alloy composition in AlxGa1-xAs and InxGa1-xAs structures

被引：3

作者：

Engelbrecht, JAA ^{[1
]}

Botha, JR ^{[1
]}

机构：

[1] UNIV WESTERN CAPE,DEPT PHYS,ZA-7535 BELLVILLE,SOUTH AFRICA

来源：

APPLIED SPECTROSCOPY | 1997年 / 51卷 / 03期

关键词：

infrared reflectance; AlxGa1-xAs; InxGa1-xAs; alloy composition;

D O I：

10.1366/0003702971940332

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm(-1). The peak height is found to be linearly dependent on the aluminum content in AlxGa1-xAs layers on GaAs substrates. Previously published spectra for InxGa1-xAs yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm(-1). A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.

引用

页码：433 / 437

页数：5

共 50 条

[1] Infrared reflectivity determination of alloy composition in AlxGa1-xAs and InxGa1-xAs structures
Univ of Port Elizabeth, Port Elizabeth, South Africa
Appl Spectrosc, 3 (433-437):
[2] Comments on the reflectivity of AlxGa1-xAs and InxGa1-xAs layers on GaAs substrates
Engelbrecht, JAA
SOUTH AFRICAN JOURNAL OF SCIENCE, 1999, 95 (09) : 413 - 414
[3] SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS
KUECH, TF
GOORSKY, MS
TISCHLER, MA
PALEVSKI, A
SOLOMON, P
POTEMSKI, R
TSAI, CS
LEBENS, JA
VAHALA, KJ
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 116 - 128
[4] Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
Luyo-Alvarado, J
Santana-Aranda, MA
Meléndez-Lira, M
López-López, M
Méndez, VH
Vidal, MA
Yonezu, H
THIN SOLID FILMS, 2000, 373 (1-2) : 37 - 40
[5] PRECISE QUANTIZED HALL RESISTANCE MEASUREMENTS IN GAAS/ALXGA1-XAS AND INXGA1-XAS/INP HETEROSTRUCTURES
DELAHAYE, F
DOMINGUEZ, D
ALEXANDRE, F
ANDRE, JP
HIRTZ, JP
RAZEGHI, M
METROLOGIA, 1986, 22 (02) : 103 - 110
[6] FIELD-EFFECT ON THE DEEP LEVELS AND DX CENTERS IN ALXGA1-XAS/GAAS AND INXGA1-XAS/GAAS
HALDER, NC
ECHON, EA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2323 - 2330
[7] Specific features of Hall effect in capped multilayer pHEMT structure of AlxGa1-xAs/InxGa1-xAs/GaAs
Soetedjo, H
Jusoh, MS
Sabtu, L
Yahya, MR
Mat, AFA
MATERIALS LETTERS, 2005, 59 (29-30) : 3810 - 3812
[8] INVESTIGATION OF MOCVD GROWTH OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/GAAS/ALXGA1-XAS/GAAS MULTILAYER STRUCTURES WITH HIGH AL CONTENT
GAO, HK
YUN, F
ZHANG, JK
HOU, X
GONG, P
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 428 - 433
[9] ALLOY SCATTERING IN THE INXGA1-XAS SYSTEM
ALIEV, MI
KHALILOV, KA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1350 - 1352
[10] AUTOMATED GROWTH OF ALXGA1-XAS AND INXGA1-XAS BY MOLECULAR-BEAM EPITAXY USING AN ION GAUGE FLUX MONITOR
WUNDER, R
STALL, R
MALIK, R
WOELFER, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 964 - 967

← 1 2 3 4 5 →