Spin-dependent trap-assisted tunneling current in ultra-thin gate dielectrics

被引：8

作者：

Miura, Y ^{[1
]}

Fujieda, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Silicon Syst Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 4B期

关键词：

gate dielectrics; leakage current; silicon nitride; trap-assisted current; electron spin resonance; spin-dependent tunneling;

D O I：

10.1143/JJAP.40.2840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have characterized the leak-age current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 run. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leak-age current.

引用

页码：2840 / 2843

页数：4

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