Prediction of thermal resistance in trench isolated bipolar device structures

被引：17

作者：

Walkey, DJ ^{[1
]}

Smy, TJ ^{[1
]}

Tran, H ^{[1
]}

Marchesan, D ^{[1
]}

Schröter, M ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 mu m trench isolated 35GHz f(T) bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.

引用

页码：207 / 210

页数：4