Native defects in n-type Sn-doped GaAs using positron annihilation technique

被引：0

作者：

Saha, AK ^{[1
]}

Gugre, S

Das, D

SenGupta, A

机构：

[1] Visva Bharati Univ, Dept Phys, Santini Ketan 731235, W Bengal, India

[2] IUC DAE Facil, Kolkata Ctr, Kolkata 700098, India

来源：

POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS | 2004年 / 445-6卷

关键词：

GaAsSn-doped; positron lifetime; S-parameter; vacancy-dopant complex;

D O I：

10.4028/www.scientific.net/MSF.445-446.174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron lifetime measurements have been carried out in n-type Sn-doped GaAs (n similar to 5 x 10(17) cm(-3)) during isochronal annealing over a temperature range 20-520degreesC. The annealing results have revealed a significant change in positron lifetime parameters beyond 320degreesC indicating a configurational change in the acceptor type vacancy-dopant complex in the material. The long lifetime component 295ps obtained at room temperature has been attributed to this specific acceptor type vacancy-dopant complex.

引用

页码：174 / 176

页数：3