Direct observation of a surface resonance state and surface band inversion control in black phosphorus

被引：32

作者：

Ehlen, N. ^{[1
]}

Sanna, A. ^{[2
]}

Senkovskiy, B. V. ^{[1
]}

Petaccia, L. ^{[3
]}

Fedorov, A. V. ^{[1
,4
]}

Profeta, G. ^{[5
,6
]}

Grueneis, A. ^{[1
]}

机构：

[1] Univ Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany

[2] Max Planck Inst Mikrostrukturphys, Weinberg 2, D-06120 Halle, Germany

[3] Elettra Sincrotrone Trieste, Str Statale 14 Km 163-5, I-34149 Trieste, Italy

[4] IFW Dresden, POB 270116, D-01171 Dresden, Germany

[5] Univ Aquila, Dept Phys & Chem Sci, Via Vetoio 10, I-67100 Coppito, Italy

[6] Univ Aquila, SPIN, CNR, Via Vetoio 10, I-67100 Coppito, Italy

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 04期

关键词：

TRANSITION; POTASSIUM; INSULATOR; FIELD;

D O I：

10.1103/PhysRevB.97.045143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a Cs-doping-induced band inversion and the direct observation of a surface resonance state with an elliptical Fermi surface in black phosphorus (BP) using angle-resolved photoemission spectroscopy. By selectively inducing a higher electron concentration (1.7 x 10(14) cm(-2)) in the topmost layer, the changes in the Coulomb potential are sufficiently large to cause surface band inversion between the parabolic valence band of BP and a parabolic surface state around the Gamma point of the BP Brillouin zone. Tight-binding calculations reveal that band gap openings at the crossing points in the two high-symmetry directions of the Brillouin zone require out-of-plane hopping and breaking of the glide mirror symmetry. Ab initio calculations are in very good agreement with the experiment if a stacking fault on the BP surface is taken into account. The demonstrated level of control over the band structure suggests the potential application of few-layer phosphorene in topological field-effect transistors.

引用

页数：10

共 31 条

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