Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

被引：72
|
作者：
Sidorov, YG [1 ]
Dvoretskii, SA [1 ]
Varavin, VS [1 ]
Mikhailov, NN [1 ]
Yakushev, MV [1 ]
Sabinina, IV [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 09期
关键词：
D O I：
10.1134/1.1403569
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alternative substrates by molecular-beam epitaxy. Physical and chemical processes of growth and defect-generation mechanisms were studied for CdZnTe epitaxy on atomically clean singular and vicinal surfaces of gallium-arsenide substrates and CdHgTe films on CdZnTe/GaAs surfaces. ZnTe single-crystalline films were grown on silicon substrates. Methods for reducing the content of defects in CdZnTe/GaAs and CdHgTe films were developed. Equipment for molecular-beam epitaxy was designed for growing the heteroepitaxial structures on large-diameter substrates with a highly uniform composition over the area and their control in situ. Heteroepitaxial MCT layers with excellent electrical parameters were grown on GaAs by molecular-beam epitaxy. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1045 / 1053
页数：9
相关论文
共 50 条
  • [1] Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates
    Yu. G. Sidorov
    S. A. Dvoretskii
    V. S. Varavin
    N. N. Mikhailov
    M. V. Yakushev
    I. V. Sabinina
    Semiconductors, 2001, 35 : 1045 - 1053
  • [2] THE DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    WIJEWARNASURIYA, PS
    SIVANANTHAN, S
    SOU, IK
    KIM, YJ
    MAHAVADI, KK
    FAURIE, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2830 - 2833
  • [3] MERCURY CADMIUM TELLURIDE JUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    YOO, S
    SOU, IK
    DESOUZA, M
    FAURIE, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2623 - 2626
  • [4] Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
    K. D. Mynbaev
    S. V. Zablotsky
    A. V. Shilyaev
    N. L. Bazhenov
    M. V. Yakushev
    D. V. Marin
    V. S. Varavin
    S. A. Dvoretsky
    Semiconductors, 2016, 50 : 208 - 211
  • [5] Defects in Mercury-Cadmium Telluride Heteroepitaxial Structures Grown by Molecular-Beam Epitaxy on Silicon Substrates
    Mynbaev, K. D.
    Zablotsky, S. V.
    Shilyaev, A. V.
    Bazhenov, N. L.
    Yakushev, M. V.
    Marin, D. V.
    Varavin, V. S.
    Dvoretsky, S. A.
    SEMICONDUCTORS, 2016, 50 (02) : 208 - 211
  • [6] THE INTRINSIC AND EXTRINSIC DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    FAURIE, JP
    SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 351 - 359
  • [7] THE INTRINSIC AND EXTRINSIC DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    FAURIE, JP
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 351 - 359
  • [8] INSITU SPECTROSCOPIC ELLIPSOMETRY DURING MOLECULAR-BEAM EPITAXY OF CADMIUM MERCURY TELLURIDE
    DEMAY, Y
    ARNOULT, D
    GAILLIARD, JP
    MEDINA, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3139 - 3142
  • [9] Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy
    Aoki, T
    Smith, DJ
    Chang, Y
    Zhao, J
    Badano, G
    Grein, C
    Sivananthan, S
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2275 - 2277
  • [10] MERCURY CADMIUM TELLURIDE N-ISOTYPE HETEROJUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY
    BOUKERCHE, M
    SOU, IK
    DESOUZA, M
    YOO, SS
    FAURIE, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3119 - 3123
12345