Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

被引：72

作者：

Sidorov, YG ^{[1
]}

Dvoretskii, SA ^{[1
]}

Varavin, VS ^{[1
]}

Mikhailov, NN ^{[1
]}

Yakushev, MV ^{[1
]}

Sabinina, IV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 09期

关键词：

D O I：

10.1134/1.1403569

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alternative substrates by molecular-beam epitaxy. Physical and chemical processes of growth and defect-generation mechanisms were studied for CdZnTe epitaxy on atomically clean singular and vicinal surfaces of gallium-arsenide substrates and CdHgTe films on CdZnTe/GaAs surfaces. ZnTe single-crystalline films were grown on silicon substrates. Methods for reducing the content of defects in CdZnTe/GaAs and CdHgTe films were developed. Equipment for molecular-beam epitaxy was designed for growing the heteroepitaxial structures on large-diameter substrates with a highly uniform composition over the area and their control in situ. Heteroepitaxial MCT layers with excellent electrical parameters were grown on GaAs by molecular-beam epitaxy. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：1045 / 1053

页数：9

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