8 μm strain-compensated quantum cascade laser operating at room temperature

被引：5

作者：

Guo, Y ^{[1
]}

Liu, FQ ^{[1
]}

Liu, JQ ^{[1
]}

Li, CM ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期

关键词：

D O I：

10.1088/0268-1242/20/8/037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

引用

页码：844 / 846

页数：3

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