0.3-V Bulk-Driven Nanopower OTA-C Integrator in 0.18 Aμm CMOS

被引：34

作者：

Khateb, Fabian ^{[1
,2
]}

Kulej, Tomasz ^{[3
]}

Akbari, Meysam ^{[4
]}

Steffan, Pavel ^{[1
]}

机构：

[1] Brno Univ Technol, Dept Microelect, Tech 10, Brno, Czech Republic

[2] Czech Tech Univ, Fac Biomed Engn, Nam Sitna 3105, Kladno, Czech Republic

[3] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland

[4] Shahid Beheshti Univ, Microelect Res Lab, GC, Tehran, Iran

来源：

CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2019年 / 38卷 / 03期

关键词：

Bulk-driven; OTA-C integrator; Low voltage; Low power; Sub-0.5-V circuits;

D O I：

10.1007/s00034-018-0901-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This short paper presents the experimental results for a 0.3-V fully differential OTA-C integrator, implemented in a standard n-well 0.18 A mu m CMOS technology from TSMC with chip area 350 x 100 A mu m. The integrator consists of an adaptively biased bulk-driven linear operational transconductance amplifier (OTA) and a low-distortion common-mode feedback circuit. The integrator can operate with supply voltages ranging from 0.3 to 0.5 V. For a 0.3-V version, its cutoff frequency can be tuned from 50 to 334 Hz for a 220 pF load capacitance. For a nominal biasing current, its power consumption is 50 nW and the dynamic range is 75 dB.

引用

页码：1333 / 1341

页数：9

共 16 条

[1]

[Anonymous], IEEE T VERY LARGE SC

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