Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

被引：58

作者：

Boyd, Adam R. ^{[1
]}

Degroote, Stefan ^{[2
]}

Leys, Maarten ^{[2
]}

Schulte, Frank ^{[1
]}

Rockenfeller, Olaf ^{[1
]}

Luenenbuerger, Markus ^{[1
]}

Germain, Marianne ^{[2
]}

Kaeppeler, Johannes ^{[1
]}

Heuken, Michael ^{[1
]}

机构：

[1] AIXTRON AG, Kackertstr 15-17, D-52072 Aachen, Germany

[2] IMEC, Melbourne, Vic 3001, Australia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

D O I：

10.1002/pssc.200880925

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An AlGaN based high electron mobility transistor (HEMT) structure was grown on 200 mm diameter (111) silicon by metal organic chemical vapour deposition (MOCVD). The growth was initiated by an AlN layer directly on Si. A level wafer temperature profile (+5 degrees C) was achieved throughout the process by use of a variable concentric heater profile. This was realised by monitoring the wafer temperature profile of the entire wafer in-situ using pyrometry. Excellent uniformity, sigma similar to 1%, of each component layer was achieved across the wafer which was crack and slipline free material except for the outer 2 mm. This demonstrates the potential for growth of GaN based devices on 200 mm. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S1045 / S1048

页数：4

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