Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

被引:5
作者
Chuang, Lu-Chung [1 ]
Maeda, Kensaku [1 ]
Morito, Haruhiko [1 ]
Shiga, Keiji [1 ]
Miller, Wolfram [2 ]
Fujiwara, Kozo [1 ]
机构
[1] Tohoku Univ, Inst Mat Res IMR, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
[2] Leibniz Inst Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany
基金
日本学术振兴会;
关键词
Grain boundary; Multicrystalline Si; Directional solidification; IN-SITU OBSERVATION; DIRECTIONAL SOLIDIFICATION; EVOLUTION; DISLOCATIONS;
D O I
10.1016/j.mtla.2019.100357
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interactions between Sigma 3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Sigma 3 GBs, but this behavior transitions into coalescence with Sigma 3s when the misorientation approaches the limit of a SAGB, i.e. 15 degrees. On the other hand, general GBs show the ability to terminate Sigma 3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.
引用
收藏
页数:10
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