TEMPERATURE BEHAVIOR OF 4H-SIC MOS CAPACITOR USED AS A GAS SENSOR

被引：0
|
作者：
Pascu, Razvan [1 ,2 ]
Pristavu, Gheorghe [1 ]
Badila, Marian [1 ]
Brezeanu, Gheorghe [1 ]
Draghici, Florin [1 ]
Craciunoiu, Florea [2 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
[2] IMT Bucharest, Natl Inst R&D Microtechnol, Voluntari, Romania
来源：
2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2014年
关键词：
Silicon Carbide; MOS Capacitor; Temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 degrees C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.
引用
收藏
页码：185 / 188
页数：4
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