25-Gb/s Multichannel 1.3-μ Surface-Emitting Lens-Integrated DFB Laser Arrays

被引:35
作者
Adachi, Koichiro [1 ]
Shinoda, Kazunori [1 ]
Kitatani, Takeshi [1 ]
Fukamachi, Toshihiko [2 ]
Matsuoka, Yasunobu [1 ]
Sugawara, Toshiki [1 ]
Tsuji, Shinji [1 ,3 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
[2] Opnext Japan Inc, Yokohama, Kanagawa 2448567, Japan
[3] Photon Elect Technol Res Assoc, Tokyo 1120014, Japan
关键词
Distributed-feedback (DFB) devices; surfacemount technology; optical interconnections; quantum-well lasers; surface-emitting lasers; HIGH-SPEED; MU-M; OPERATION; DIODE;
D O I
10.1109/JLT.2011.2163814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two multichannel 1.3-mu m lens integrated surface- emitting laser arrays for massive data links were fabricated. The basic structure of the lasers consists of a short InGaAlAs multiple-quantum-well distributed-feedback (DFB) active- stripe array monolithically integrated with both a 45 degrees total reflection mirror and an aspheric collimation lens. One of them, a four-channel laser array based on this structure, exhibited clear 25-Gb/s eye openings up to50 degrees degrees C over all four channels and achieved a total output of 100 Gb/s. The other laser, a multiple-wavelength array for wavelength-division-multiplexing applications, produces multiple-wavelength emission thanks to precisely modified DFB gratings by electron beam lithography. It exhibited nine-wavelength stable single-mode operation (side-mode suppression ratio > 40dB) between 1260 and 1290 nm at 3.7-nm intervals, and a clear 25-Gb/s eye opening for each wavelength. These two surface- emitting laser arrays have demonstrated their suitability for next-generation multichannel data links (including 100-Gb Ethernet and optical interconnects).
引用
收藏
页码:2899 / 2905
页数:7
相关论文
共 33 条
[21]  
Müller M, 2010, 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, P156, DOI 10.1109/ISLC.2010.5642703
[22]   120°C 20 Gbit/s operation of 980 nm VCSEL [J].
Mutig, A. ;
Fiol, G. ;
Moser, P. ;
Arsenijevic, D. ;
Shchukin, V. A. ;
Ledentsov, N. N. ;
Mikhrin, S. S. ;
Krestnikov, I. L. ;
Livshits, D. A. ;
Kovsh, A. R. ;
Hopfer, F. ;
Bimberg, D. .
ELECTRONICS LETTERS, 2008, 44 (22) :1305-U26
[23]  
Mutig A, 2010, 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, P158, DOI 10.1109/ISLC.2010.5642704
[24]  
NISHIYAMA N, 2006, OPT FIB COMM C AN CA
[25]   FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
HILL, P ;
LANZISERA, V ;
POWAZINIK, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418
[26]  
ROSCHER H, 2007, EUR C LAS EL MUN GER
[27]  
Shinohara K., 2010, P OPTOELECTRON COMM, P1
[28]   SURFACE EMITTING INGAASP/INP DISTRIBUTED FEEDBACK LASER DIODE AT 1.53 MU-M WITH MONOLITHIC INTEGRATED MICROLENS [J].
STEGMULLER, B ;
WESTERMEIER, H ;
THULKE, W ;
FRANZ, G ;
SACHER, D .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :776-778
[29]   25 Gbit/s operation of InGaAs-based VCSELs [J].
Suzuki, N. ;
Hatakeyama, H. ;
Fukatsu, K. ;
Anan, T. ;
Yashiki, K. ;
Tsuji, A. .
ELECTRONICS LETTERS, 2006, 42 (17) :975-976
[30]  
Takeuchi T, 2003, IEEE LEOS ANN MTG, P35