A Millimeter-Wave CMOS VCO Featuring a Mode-Ambiguity-Aware Multi-Resonant-RLCM Tank

被引：30
作者：
Guo, Hao [1 ,2 ]
Chen, Yong [1 ,2 ]
Yang, Chaowei [1 ,2 ]
Mak, Pui-In [1 ,2 ]
Martins, Rui P. [1 ,2 ]
机构：
[1] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau 999078, Peoples R China
[2] Univ Macau, IME ECE FST, Macau 999078, Peoples R China
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2022年 / 69卷 / 01期
关键词：
CMOS; 1/ f3 phase noise corner; figure-of-merit (FOM); flicker (1/f) noise; thermal noise; inductor-capacitor (LC) tank; voltage-controlled oscillator (VCO); impulse sensitivity function (ISF); common-mode (CM); differential-mode (DM); resistor-inductor-capacitor-mutual inductance (RLCM); NOISE UP-CONVERSION; PHASE-NOISE; OSCILLATOR; DESIGN;
D O I：
10.1109/TCSI.2021.3096196
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a millimeter-wave NMOSPMOS-complementary (CMOS) VCO with a multi-resonant Resistor-Inductor-Capacitor-Mutual Inductance (RLCM) tank. It features an 8-port multi-tap inductor with the switched-capacitor arrays to generate and align the 1st, 2nd and 3rd harmonic resonances; all exhibit high impedance and high intrinsic quality factor to improve the absolute phase noise (PN) at both the flicker and thermal regions. The inductor of the RLCM tank introduces a metal resistor technique to fully prevent the mode-ambiguity issue during the VCO startup. Meanwhile, we first propose a detailed analysis of the upper and lower bound of the metal resistor, which is verified by the theoretical analysis, and circuit simulation. Prototyped in 65-nm CMOS technology, the VCO scores a PN@ 1MHz down to -111.41 dBc/Hz with a power consumption of 11.1 mW at 1 V; it corresponds to a FOM@ 1MHz up to 189.4 dBc/Hz over a 15.2% tuning range (24.62 to 28.66 GHz), while exhibiting a low 1/f3PN corner between 480 to 730 kHz.
引用
收藏
页码：172 / 185
页数：14
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