Many-body effects on the ground-state energy in semiconductor quantum wells

被引：0
|
作者：
Kim, MR [1 ]
Tong, C
Kim, SK
Son, MS
Shin, DH
Rhee, JK
机构：
[1] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea
[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 106卷 / 02期
基金：
欧洲研究理事会;
关键词：
quantum wells; many-body effects; ground-state energy;
D O I：
10.1016/j.mseb.2003.09.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ground-state energy due to exchange interaction and screening of the Coulomb correlation for the electron-hole plasma in strained-layer quantum wells is examined as functions of sheet carrier density and biaxial strain. We calculate the leading-order self-energy within the full random-phase approximation for consideration of many-body effects, taking into account the valence-band non-parabolicity. We solve the Luttinger-Kohn Hamiltonian in the k.p method considering valence-band mixing to obtain the valence-band structure for the holes. It is shown that the ground-state energy strongly depends on the sheet carrier density and strain. We also see that the screening of Coulomb correlation plays an important role in determination of the ground-state energy of the strained-layer quantum wells. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：177 / 181
页数：5
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