Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition

被引：26

作者：

Cappelli, E. ^{[1
]}

Trucchi, D. M. ^{[1
]}

Kaciulis, S. ^{[2
]}

Orlando, S. ^{[3
]}

Zanza, A. ^{[1
]}

Mezzi, A. ^{[2
]}

机构：

[1] CNR IMIP, I-00016 Rome, Italy

[2] CNR ISMN, I-00016 Rome, Italy

[3] CNR IMIP Sez Potenza, I-85050 Potenza, Italy

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 12期

关键词：

Carbon nitride; Thin films; Plasma assisted deposition; Pulse laser deposition; X-ray photoelectron spectroscopy; Surface conductivity; DIAMOND-LIKE CARBON; MECHANICAL-PROPERTIES; NITROGEN; ABLATION; GRAPHITE; TRANSFORMATION;

D O I：

10.1016/j.tsf.2011.01.194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of deposition temperature and nitrogen inclusion in amorphous carbon (a-C) films, deposited by plasma enhanced pulsed laser deposition, on chemical composition and electronic transport has been studied. a-CNx films were deposited on Si (100) by pulsed ArF laser ablation of a graphite target, under N-2 atmosphere. A radiofrequency (13.56 MHz RF) apparatus was used to generate plasma of excited nitrogen species, and its effect on nitrogen uptake and CNx film formation has been studied. Chemical and micro-structural changes associated to increased deposition temperature and nitrogen incorporation were examined by x-ray photoelectron spectroscopy; electrical properties were analyzed by the four-point-probe methods. Temperature-dependent conductivity measurements are tentatively interpreted and discussed in reference to chemical composition. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4059 / 4063

页数：5

共 32 条

[1] Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source [J].