High electron mobility transistors on plastic flexible substrates

The double-flip transfer of indium phosphide (InP) based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures (<= 150 degrees C). The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility (mu(average) similar to 2800 cm(2) V-1 s(-1)). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593006]