Performance study of tunneling field effect transistors based on the graphene and phosphorene nanoribbons

被引：6
作者：
Shamloo, H. [1 ]
Goharrizi, A. Yazdanpanah [1 ]
机构：
[1] Shahid Beheshti Univ, Fac Elect Engn, Tehran, Iran
来源：
MICRO AND NANOSTRUCTURES | 2022年 / 169卷
关键词：
TFET; Graphene; Phosphorene; Tight binding; Non -equilibrium Green ? s function (NEGF); FETS; CAPACITANCE; DEVICE;
D O I：
10.1016/j.micrna.2022.207336
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The present work deals with the simulation and comparison of two tunneling field effect transistors (TFETs) based on the single layers of armchair graphene nanoribbons (AGNRs) and armchair phosphorene nanoribbons (APNRs). The transmission properties of the transistor have been obtained by solving the Schro??dinger-Poisson equations self-consistently using the nonequilibrium Green???s function (NEGF) formalism and the real-space approach. In addition, the energy band structure of the two materials have been obtained using tight-binding approximation method. The simulation results in each bias include the energy band structure, energy-resolved current spectrum, transmission function and drain current versus gate voltage diagrams. The results indicate that the structure of phosphorene TFETs meets a better ION to IOFF ratio and subthreshold swing than the graphene TFETs despite a relative decrease in the amount of ION.
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收藏
页数：8
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