Electrodeposited metal sulfide semiconductor films with ordered nanohole array structures

Porous CdS and SnS films with ordered nanohole array structures were produced from anodic porous alumina by a two-step replication process. The nanohole array structure was formed by electrodeposition of CdS or SnS onto a prepared negative structure of the porous alumina template. The porous metal sulfide films with uniform, closely packed, and straight nanoholes are 1 mum thick and contain pores of an average diameter of 200 nm. Energy-dispersive spectrometry and X-ray photoelectron spectroscopy analyses indicate that the stoichiometric ratio of metal to sulfur is approximately 1:1 in the porous films. The crystal structures of CdS and SnS in the porous films were characterized by X-ray diffraction.