Computational Study of InAs/GaAs Quantum Dot Arrays

被引：0

作者：

Gomez-Campos, F. M. ^{[1
]}

Rodriguez-Bolivar, S. ^{[1
]}

Luque-Rodriguez, A. ^{[1
]}

Lopez-Villanueva, J. A. ^{[1
]}

Carceller, J. E. ^{[1
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

关键词：

component; Quantum dot; ordered nanostructures; photon absorption coefficient; miniband structure;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrodinger equation associated with these structures, using a set of 13x13x13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different effective masses in each material in our calculations. The effects of the strain were included by taking a conduction band offset of 0.5 eV, corresponding to strained InAs in GaAs.

引用

页码：223 / 226

页数：4

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