Growth and characterization of Ba(Al,Ga)BO3F2 crystal

被引：18

作者：

Wang, Jianuo ^{[1
,2
]}

Yue, Yinchao ^{[1
]}

Yao, Jiyong ^{[1
]}

Hu, Zhanggui ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Funct Crystals & Laser Technol, BCCRD, Tech Inst Phys & Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100190, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Crystal structure; X-ray diffraction; Middle-seeded solution growth technique; Nonlinear optical crystals; BAALBO3F2;

D O I：

10.1016/j.jcrysgro.2010.10.223

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new nonlinear crystal BaAl1-xGaxBO3F2 has been synthesized by doping with Ga in BaAlBO3F2. The powder XRD patterns of the new crystal revealed single phase samples similar to those of BaAlBO3F2 up to x=0.7. Single crystals of BaAl1-xGaxBO3F2 with reactants of Al2O3 and Ga2O3 in a ratio of 0.5:0.5, respectively, have been grown using the middle-seeded solution growth technology with the B2O3-LiF-NaF flux system. This new crystal has been found to crystallize in the space group P (6) over bar 2c with the cell dimensions a = 4.8749 angstrom and c = 9.4159 angstrom. A wide transmission range was observed in the case of the transmission spectrum of the BaAl1-xGaxBO3F2 crystal. Sellmeier equations were established on the basis of their refractive indices and the second-harmonic generation efficiency of the new crystal was also measured. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：962 / 965

页数：4

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