Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

被引：92

作者：

Dong, Yuan ^{[1
]}

Wang, Wei ^{[1
]}

Xu, Shengqiang ^{[1
]}

Lei, Dian ^{[1
]}

Gong, Xiao ^{[1
]}

Guo, Xin ^{[2
]}

Wang, Hong ^{[2
]}

Lee, Shuh-Ying ^{[2
]}

Loke, Wan-Khai ^{[2
]}

Yoon, Soon-Fatt ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 14期

关键词：

MU-M; SI; PHOTODETECTORS;

D O I：

10.1364/OE.25.015818

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 mu m-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm(2) is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f(3dB)) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 mu m. It is anticipated that further device optimization would extend the f3dB to above 10 GHz. (C) 2017 Optical Society of America

引用

页码：15818 / 15827

页数：10

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