Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates

被引：12

作者：

Shen, Xu-Qiang ^{[1
]}

Kojima, Kazutoshi ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr ADPERC, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 03期

关键词：

GALLIUM NITRIDE FILMS; 11(2)OVER-BAR2 AIN; ORIENTATION; GROWTH; MOVPE; GAN;

D O I：

10.35848/1882-0786/ab7486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-phase flat semipolar (10-13) AIN epilayers on m-plane (10-10) sapphire substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by X-ray diffraction and cross-sectional characterization. An X-ray rocking curve (XRC) shows the full widths at half maximum (FWHM) of the (10-13) and the (0002) diffraction peaks from a similar to 2.3 mu m thick AIN film as narrow as 322 and 373 arcsec, respectively, indicating a high structural quality. Semipolar AIN epilayers hold great promise for high performance deep-ultraviolet (DUV) optoelectronic device applications. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

共 47 条

[11] Single phase (11(2)over-bar2) AIN grown on (10(1)over-bar0) sapphire by metalorganic vapour phase epitaxy [J].

Dinh, Duc V. ;

Conroy, M. ;

Zubialevich, V. Z. ;

Petkov, N. ;

Holmes, J. D. ;

Parbrook, P. J. .

JOURNAL OF CRYSTAL GROWTH, 2015, 414 :94-99

[12] 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Enya, Yohei ;

Yoshizumi, Yusuke ;

Kyono, Takashi ;

Akita, Katsushi ;

Ueno, Masaki ;

Adachi, Masahiro ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Ikegami, Takatoshi ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[13] Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire [J].

Frentrup, Martin ;

Ploch, Simon ;

Pristovsek, Markus ;

Kneissl, Michael .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (03) :583-587

[14] Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle [J].

Fukuyama, Hiroyuki ;

Miyake, Hideto ;

Nishio, Gou ;

Suzuki, Shuhei ;

Hiramatsu, Kazumasa .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)

[15] Spatial solitons in KTaxNb1-xO3 waveguides produced by swift carbon ion irradiation and femtosecond laser ablation [J].

He, Shan ;

Zhang, Ziyang ;

Liu, Hongliang ;

Akhmadaliev, Shavkat ;

Zhou, Shengqiang ;

Wang, Xuping ;

Wu, Pengfei .

APPLIED PHYSICS EXPRESS, 2019, 12 (07)

[16] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer [J].

Hirayama, Hideki ;

Tsukada, Yusuke ;

Maeda, Tetsutoshi ;

Kamata, Norihiko .

APPLIED PHYSICS EXPRESS, 2010, 3 (03)

[17] InGaN/GaN Blue Laser Diode Grown on Semipolar (30(3)over-bar1) Free-Standing GaN Substrates [J].

Hsu, Po Shan ;

Kelchner, Kathryn M. ;

Tyagi, Anurag ;

Farrell, Robert M. ;

Haeger, Daniel A. ;

Fujito, Kenji ;

Ohta, Hiroaki ;

DenBaars, Steven P. ;

Speck, James S. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2010, 3 (05) :10DUMY

[18] High quality semipolar (1(1)over-bar02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities [J].

Ichikawa, S. ;

Iwata, Y. ;

Funato, M. ;

Nagata, S. ;

Kawakami, Y. .

APPLIED PHYSICS LETTERS, 2014, 104 (25)

[19] 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265nm [J].

Inoue, Shin-ichiro ;

Tamari, Naoki ;

Taniguchi, Manabu .

APPLIED PHYSICS LETTERS, 2017, 110 (14)

[20] MBE-grown 232-270nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures [J].

Islam, S. M. ;

Lee, Kevin ;

Verma, Jai ;

Protasenko, Vladimir ;

Rouvimov, Sergei ;

Bharadwaj, Shyam ;

Xing, Huili ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2017, 110 (04)

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