Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates

被引：12

作者：

Shen, Xu-Qiang ^{[1
]}

Kojima, Kazutoshi ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr ADPERC, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 03期

关键词：

GALLIUM NITRIDE FILMS; 11(2)OVER-BAR2 AIN; ORIENTATION; GROWTH; MOVPE; GAN;

D O I：

10.35848/1882-0786/ab7486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-phase flat semipolar (10-13) AIN epilayers on m-plane (10-10) sapphire substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by X-ray diffraction and cross-sectional characterization. An X-ray rocking curve (XRC) shows the full widths at half maximum (FWHM) of the (10-13) and the (0002) diffraction peaks from a similar to 2.3 mu m thick AIN film as narrow as 322 and 373 arcsec, respectively, indicating a high structural quality. Semipolar AIN epilayers hold great promise for high performance deep-ultraviolet (DUV) optoelectronic device applications. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

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