The Regulation of Transcription in Memory Consolidation

被引:245
作者
Alberini, Cristina M. [1 ]
Kandel, Eric R. [2 ,3 ,4 ,5 ,6 ]
机构
[1] NYU, Ctr Neural Sci, New York, NY 10003 USA
[2] New York State Psychiat Inst & Hosp, Zuckerman Mind Brain Behav Inst, New York, NY 10032 USA
[3] New York State Psychiat Inst & Hosp, Dept Neurosci, New York, NY 10032 USA
[4] New York State Psychiat Inst & Hosp, Kavli Inst Brain Sci, New York, NY 10032 USA
[5] New York State Psychiat Inst & Hosp, Howard Hughes Med Inst, New York, NY 10032 USA
[6] Columbia Univ, New York State Psychiat Inst, Coll Phys & Surg, New York, NY 10032 USA
来源
COLD SPRING HARBOR PERSPECTIVES IN BIOLOGY | 2015年 / 7卷 / 01期
关键词
LONG-TERM-MEMORY; NF-KAPPA-B; ELEMENT-BINDING PROTEIN; RUBINSTEIN-TAYBI-SYNDROME; CAMP-RESPONSIVE ELEMENT; MESSENGER-RNA SYNTHESIS; SYNAPTIC PLASTICITY; EPIGENETIC MECHANISMS; GENE-EXPRESSION; ACTINOMYCIN-D;
D O I
10.1101/cshperspect.a021741
中图分类号
Q2 [细胞生物学];
学科分类号
071009 ; 090102 ;
摘要
De novo transcription of DNA is a fundamental requirement for the formation of long-term memory. It is required during both consolidation and reconsolidation, the posttraining and postreactivation phases that change the state of the memory from a fragile into a stable and long-lasting form. Transcription generates both mRNAs that are translated into proteins, which are necessary for the growth of new synaptic connections, as well as noncoding RNA transcripts that have regulatory or effector roles in gene expression. The result is a cascade of events that ultimately leads to structural changes in the neurons that mediate long-term memory storage. The de novo transcription, critical for synaptic plasticity and memory formation, is orchestrated by chromatin and epigenetic modifications. The complexity of transcription regulation, its temporal progression, and the effectors produced all contribute to the flexibilityand persistence of long-term memory formation. In this article, we provide an overview of the mechanisms contributing to this transcriptional regulation underlying long-term memory formation.
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页数:18
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