Effects of oxygen plasma treatment on the dielectric properties of Ba0.7Sr0.3TiO3 thin films

被引:6
|
作者
Tan, Lefan [1 ]
Xiong, Niandeng [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
BST; Oxygen plasma treatment; Dielectric property; Leakage current; FERROELECTRICS; CAPACITORS; TUNABILITY; DEVICES; MGO;
D O I
10.1016/j.apsusc.2010.10.121
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Barium strontium titanate (BST) films prepared by RF magnetron sputtering were processed in an O-2-plasma treatment system. Experiment results indicate that the leakage current and dielectric loss of the films were effectively reduced after plasma treatment. The possible mechanism may be attributed to the passivation of oxygen vacancies, which act as electric conduction paths of leakage current. The effects of the time, power and O-2-plasma pressure of oxygen plasma treatment on the dielectric properties of BST thin films were further investigated and optimized. Compared to as-deposited films, the BST films treated in oxygen plasma for 5 min, 200 W and 3 Torr demonstrated reduced loss tangent around 0.7% and leakage current density of 7.96 x 10(-9) A/cm(2). However, it was also found that excessive plasma treatment would affect the dielectric properties of BST films negatively. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3088 / 3091
页数:4
相关论文
共 50 条
  • [41] Synthesis and diffused phase transition of Ba0.7Sr0.3TiO3 ceramics by a reaction-sintering process
    Liou, Yi-Cheng
    Wu, Chi-Ting
    CERAMICS INTERNATIONAL, 2008, 34 (03) : 517 - 522
  • [42] Effect of (Ba plus Sr/Ti) ratio on the dielectric properties for highly (111) oriented (Ba,Sr)TiO3 thin films
    Wang, Yi
    Liu, Baoting
    Wei, Feng
    Yang, Zhimin
    Dua, Jun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 475 (1-2) : 827 - 831
  • [43] Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol-gel method
    Ye, Yun
    Guo, Tailiang
    CERAMICS INTERNATIONAL, 2009, 35 (07) : 2761 - 2765
  • [44] Studies of relaxation mechanism and conductivity property of lead-free electronic material: Ba0.7Sr0.3TiO3
    Barik, Subrat Kumar
    Nath, Susmita
    Hajra, Sugato
    Choudhary, R. N. P.
    MODERN PHYSICS LETTERS B, 2019, 33 (29):
  • [45] Terahertz dielectric spectra of (Ba,Sr)TiO3 thin films
    Komandin, G. A.
    Volkov, A. A.
    Spektor, I. E.
    Vorotilov, K. A.
    Mukhortov, V. M.
    PHYSICS OF THE SOLID STATE, 2009, 51 (07) : 1351 - 1355
  • [46] Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films
    Steinlesberger, G
    Reisinger, H
    Bachhofer, H
    Schroeder, H
    Werner, WSM
    INTEGRATED FERROELECTRICS, 2001, 38 (1-4) : 893 - 902
  • [47] Effect of Mn Doping on the Properties of Sol-gel Derived Pb0.3Sr0.7TiO3 Thin Films
    Staruch, M.
    Cil, K.
    Silva, H.
    Xiong, J.
    Jia, Q. X.
    Jain, M.
    FERROELECTRICS, 2014, 470 (01) : 227 - 233
  • [48] Dielectric properties of sol-gel synthesized SrTiO3/(Ba0.7Sr0.3)TiO3 and SrTiO3/Ba(Zr0.3Ti0.7)O3 thin film heterostructures
    Tarale, A. N.
    Sutar, M. M.
    Salunkhe, D. J.
    Joshi, P. B.
    Kulkarni, S. B.
    Pawar, R. C.
    Lee, C. S.
    Phase, D. M.
    Gupta, M.
    Chaudhary, R. J.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (04) : 1308 - 1318
  • [49] Temperature-dependent current-voltage characteristics of fully processed Ba0.7Sr0.3TiO3 capacitors integrated in a silicon device
    Shimada, Y
    Inoue, A
    Nasu, T
    Arita, K
    Nagano, Y
    Matsuda, A
    Uemoto, Y
    Fujii, E
    Azuma, M
    Oishi, Y
    Hayashi, S
    Otsuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (1A): : 140 - 143
  • [50] Deposition temperature effect on dielectric properties of (Ba,Sr)TiO3 thin films for microwave tunable devices
    Lee, BY
    Cheon, CI
    Yun, EJ
    Kim, JS
    INTEGRATED FERROELECTRICS, 2002, 49 : 123 - 132