Shot noise suppression in a series graphene tunnel barrier structure

被引：4
作者：
Li, Yu-Xian [1 ,2 ]
Xu, Long-Fei [3 ]
机构：
[1] Hebei Normal Univ, Coll Phys, Shijiazhuang 050016, Peoples R China
[2] Hebei Adv Thin Film Lab, Shijiazhuang 050016, Peoples R China
[3] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Graphene; Shot noise; Dirac point; Conductance; ADMITTANCE; CONDUCTORS;
D O I：
10.1016/j.ssc.2010.11.029
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The shot noise properties in a graphene-based multi-quantum well structure are investigated theoretically. It is found that when the number of the potential barriers (quantum wells) is big enough and the width of the barriers and the wells is shorter than the mean free path, another Dirac-like point at which the Fermi energy equals half of the barrier height appears. The transport is almost forbidden at this new Dirac-like point, the conductivity gets the minimum, and the Fano factor approaches 1/3. With the random potential barrier being taken into consideration, the conductance enhances clearly, meanwhile the Fano factor is suppressed much more. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：219 / 222
页数：4
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