High-hardness B4C textured by a strong magnetic field technique

被引：47
作者：
Grasso, Salvatore [1 ,2 ,3 ]
Hu, Chunfeng [2 ,3 ]
Vasylkiv, Oleg [2 ,3 ]
Suzuki, Tohru S. [2 ,3 ]
Guo, Shuqi [4 ]
Nishimura, Toshiyuki [2 ,3 ]
Sakka, Yoshio [1 ,2 ,3 ]
机构：
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Natl Inst Mat Sci, Nano Ceram Ctr, Tsukuba, Ibaraki 3050047, Japan
[3] Natl Inst Mat Sci, World Premier Int Res Ctr Initiat WPI Initiat Mat, Tsukuba, Ibaraki 3050047, Japan
[4] NIMS, Hybrid Mat Ctr, Tsukuba, Ibaraki 3050047, Japan
来源：
SCRIPTA MATERIALIA | 2011年 / 64卷 / 03期
关键词：
Texture; Carbides; Hardness; Spark plasma sintering; BORON-CARBIDE; FRACTURE-TOUGHNESS;
D O I：
10.1016/j.scriptamat.2010.10.010
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High-hardness B4C was prepared by sintering samples textured by a strong magnetic field alignment technique (12 T). The c-axis was highly oriented perpendicular to the applied magnetic field. The hardnesses measured on the surface perpendicular and parallel to c-axis were 38.86 +/- 2.13 and 31.31 +/- 0.79 GPa, respectively. The high values of hardness and elastic modulus were in agreement with those reported for B4.38C monocrystal. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：256 / 259
页数：4
相关论文
共 25 条
  • [1] THE NATURE OF THE CHEMICAL BONDING IN BORON-CARBIDE .4. ELECTRONIC BAND-STRUCTURE OF BORON-CARBIDE, B13C2, AND 3 MODELS OF THE STRUCTURE B12C3
    ARMSTRONG, DR
    BOLLAND, J
    PERKINS, PG
    WILL, G
    KIRFEL, A
    [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1983, 39 (JUN): : 324 - 329
  • [2] Dynamic indentation response of fine-grained boron carbide
    Ghosh, Dipankar
    Subhash, Ghatu
    Sudarshan, Tirumalai S.
    Radhakrishnan, Ramachandran
    Gao, Xin-Lin
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (06) : 1850 - 1857
  • [3] Pressure Effects on Temperature Distribution during Spark Plasma Sintering with Graphite Sample
    Grasso, Salvatore
    Sakka, Yoshio
    Maizza, Giovanni
    [J]. MATERIALS TRANSACTIONS, 2009, 50 (08) : 2111 - 2114
  • [4] Hugh O., 1996, Handbook of Refractory Carbides and Nitrides
  • [5] Kumashiro Y, 2000, Electric refractory materials
  • [6] Atomic structure and vibrational properties of icosahedral B4C boron carbide
    Lazzari, R
    Vast, N
    Besson, JM
    Baroni, S
    Dal Corso, A
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (16) : 3230 - 3233
  • [7] Lee H, 2002, J AM CERAM SOC, V85, P1291
  • [8] HIGH-TEMPERATURE HEAT-CAPACITIES AND ELECTRICAL CONDUCTIVITIES OF BORON CARBIDES
    MATSUI, T
    ARITA, Y
    NAITO, K
    IMAI, H
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1991, 186 (01) : 7 - 12
  • [9] Atomic structure of icosahedral B4C boron carbide from a first principles analysis of NMR spectra -: art. no. 085506
    Mauri, F
    Vast, N
    Pickard, CJ
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (08) : 855061 - 855064
  • [10] Room temperature single crystal elastic constants of boron carbide
    McClellan, KJ
    Chu, F
    Roper, JM
    Shindo, I
    [J]. JOURNAL OF MATERIALS SCIENCE, 2001, 36 (14) : 3403 - 3407
123