Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt

被引：3

作者：

Vu, D. ^{[1
]}

Jurca, H. F. ^{[1
]}

Maroun, F. ^{[1
]}

Allongue, P. ^{[1
]}

Tournerie, N. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Paget, D. ^{[1
]}

Arscott, S. ^{[2
]}

Peytavit, E. ^{[2
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] CNRS, IEMN, UMR8520, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 12期

关键词：

RECOMBINATION;

D O I：

10.1103/PhysRevB.83.121304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin dependence of the photoelectron tunnel current from free-standing GaAs films into out-of-plane magnetized cobalt films is demonstrated. The measured spin asymmetry (A), resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron-spin polarization that results from a reduction in the GaAs surface-recombination velocity. The sign of A changes with that of the cobalt magnetization. In contrast, A is negligible on nonmagnetic gold films.

引用

页数：4

共 30 条

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