Phase-field modeling of twin-related faceted dendrite growth of silicon

被引：20

作者：

Chen, G. Y. ^{[1
]}

Lin, H. K. ^{[1
]}

Lan, C. W. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

来源：

ACTA MATERIALIA | 2016年 / 115卷

关键词：

Phase field modeling; Faceted dendrite; Silicon; THIN-FILM GROWTH; DIRECTIONAL SOLIDIFICATION; GERMANIUM DENDRITES; GRAIN-BOUNDARIES; SNOW CRYSTALS; MECHANISM; SI; SYSTEMS; ENERGY; MELTS;

D O I：

10.1016/j.actamat.2016.06.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the growth of a twin-related silicon dendrite through a novel phase-field model. The correctness of the model for an equilibrium twined crystal was examined first before we modeled the faceted dendrite growth. The simulated morphologies of < 112 > and < 110 > faceted dendrites were consistent with experimental observations. The growth orientation of the simulated dendrite depended on the growth rates at the ridges and the re-entrant corners. We further extended the Twin-Plane-Reentrant-Edge (TPRE) mechanism and then proposed a new growth model for faceted dendrites based on our simulations. The undercooling and twin spacing could affect the growth rates at the ridges and the re-entrant corners, which were also explained by the proposed model. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：324 / 332

页数：9

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