Bismuth germanate films prepared by Pechini method

被引：14

作者：

de Jesus, F. A. A. ^{[1
]}

Andreeta, M. R. B. ^{[2
]}

Hernandes, A. C. ^{[2
]}

Macedo, Z. S. ^{[1
]}

机构：

[1] Univ Fed Sergipe, Dept Fis, BR-49100000 Sao Cristovao, SE, Brazil

[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-15566590 Sao Carlos, SP, Brazil

来源：

OPTICAL MATERIALS | 2010年 / 32卷 / 10期

关键词：

BGO; Photoluminescence; Raman; Pechini; Film; OPTICAL-PROPERTIES; BI4GE3O12; BGO; THERMOLUMINESCENCE; LUMINESCENCE;

D O I：

10.1016/j.optmat.2010.05.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth germanate films were prepared by dip coating and spin coating techniques and the dependence of the luminescent properties of the samples on the resin viscosity and deposition technique was investigated. The resin used for the preparation of the films was obtained via Pechini method, employing the precursors Bi2O3 and GeO2. Citric acid and ethylene glycol were used as chelating and cross-linking agents, respectively. Results from X-ray diffraction and Raman spectroscopy indicated that the films sintered at 700 degrees C for 10 h presented the single crystalline phase Bi4Ge3O12. SEM images of the films have shown that homogeneous flat films can be produced by the two techniques investigated. All the samples presented the typical Bi4Ge3O12 emission band centred at 505 nm. Films with 3.1 mu m average thickness presented 80% of the luminescence intensity registered for the single crystal at the maximum wavelength. Published by Elsevier B.V.

引用

页码：1286 / 1290

页数：5

共 23 条

[11] THERMOLUMINESCENCE SPECTRA OF EULYTINE BI4SI3O12 AND BI4GE3O12 SINGLE-CRYSTALS
KOVACS, L
RAYMOND, SG
LUFF, BJ
PETER, A
TOWNSEND, PD
[J]. JOURNAL OF LUMINESCENCE, 1994, 60-1 : 574 - 577
[12] The first-principles study of electronic and optical properties of BGO and BSO scintillators
Lalic, M. V.
Souza, S. O.
[J]. OPTICAL MATERIALS, 2008, 30 (07) : 1189 - 1192
[13] Dielectric relaxation mechanism of single crystal and polycrystal bismuth germanate
Macedo, Z. S.
Oliveira, C. S. S.
Hernandes, A. C.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)
[14] Laser-sintered bismuth germanate ceramics as scintillator devices
Macedo, ZS
Silva, RS
Valerio, MEG
Martinez, AL
Hernandes, AC
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (06) : 1076 - 1081
[15] Macedo ZS, 2002, J AM CERAM SOC, V85, P1870, DOI 10.1111/j.1151-2916.2002.tb00367.x
[16] MACEDO ZS, 2003, J MATER RES, V6, P577
[17] Raman spectroscopic study of Mn-doped Bi4Ge3O12
Mihailova, B
Toncheva, D
Gospodinov, M
Konstantinov, L
[J]. SOLID STATE COMMUNICATIONS, 1999, 112 (01) : 11 - 15
[18] Pechini M. P., 1967, U.S. Patent, Patent No. [3,330,697A, 3330697, 3, 330, 697]
[19] The influence of rare-earth ions on the low-temperature thermoluminescence of Bi4Ge3O12
Raymond, SG
Townsend, PD
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (09) : 2103 - 2122
[20] Radio-, photo- and thermo-luminescence characterization in Eu3+-doped Bi4Ge3O12 single crystal for scintillator application
Shim, JB
Yoshikawa, A
Nikl, M
Vedda, A
Fukuda, T
[J]. OPTICAL MATERIALS, 2003, 24 (1-2) : 285 - 289

← 1 2 3 →