Molecular beam epitaxy and characterization of layered In2Se3 films grown on slightly misoriented (001)GaAs substrates

被引：15
作者：
Ohtsuka, T
Okamoto, T
Yamada, A
Konagai, M
机构：
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2A期
关键词：
III-VI compound semiconductors; In2Se3; molecular beam epitaxy; layered structure; anisotropic properties;
D O I：
10.1143/JJAP.38.668
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
dIn(2)Se(3) epitaxial films with a layered structure were successfully grown on (001)GaAs substrates by molecular beam epitaxy. X-ray, diffraction and electron diffraction studies revealed that the crystallinity of the films was improved by using slightly misoriented (001)GaAs substrates. Furthermore, electrical and optical anisotropies were observed in layered In2Se3 films. It was found that the conductivity of layered In2Se3 epitaxial films along the a-axis was much larger than that along the c-axis, and that the absorption coefficient of layered In2Se3 epitaxial films for light polarized parallel to the a-axis was much higher than that for light polarized parallel to the c-axis.
引用
收藏
页码：668 / 673
页数：6
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