Coulomb enhancement in CdZnSe single quantum well lasers

被引：0
|
作者：
Hsu, CF
Zory, PS
Rees, P
Haase, M
机构：
来源：
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED | 1997年 / 3001卷
关键词：
Coulomb enhancement; bandgap renormalization; carrier scattering; quantum well laser; lasing energy; wavelength; cavity length; gain; II-VI; excitonic gain;
D O I：
10.1117/12.273778
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Data showing the dependence of lasing wavelength on cavity length for CdZnSe single quantum well, buried ridgeguide lasers is presented. The ''slope'' of the data is opposite in sign to the slope calculated from conventional theory which includes carrier scattering and bandgap, renormalization. The calculated slope with Coulomb enhancement included in the model has the correct sign and the correct magnitude to within 30%. Using the Coulomb enhanced model, the key spectral features reported as evidence for an excitonic gain mechanism in room temperature CdZnSe quantum well lasers are reproduced.
引用
收藏
页码：106 / 116
页数：11
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