Combined TiN- and TaN temperature compensated thin film resistors

被引：24

作者：

Malmros, Anna ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Stockholm, Sweden

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 06期

关键词：

Thin Film Resistor; Titanium Nitride; Tantalum nitride; Temperature Coefficient of Resistance; Wheatstone bridge; FABRICATION; RESISTANCE; NITRIDE; SENSOR;

D O I：

10.1016/j.tsf.2011.09.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30-200 degrees C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/degrees C. The TaN TFR on the other hand exhibited a negative TCR of -470 ppm/degrees C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to -60 and 100 ppm/degrees C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2162 / 2165

页数：4

共 16 条

[1] Stress, resistance, and phase transitions in NiCr(60 wt%) thin films [J].