III-Nitride Microsensors for 360° Angle Detection

被引：8
|
作者：
Yin, Jiahao [1 ]
Yang, Hongying [1 ]
Luo, Yumeng [1 ]
Wang, Qing [1 ,2 ,3 ]
Yu, Hongyu [1 ,2 ,3 ]
Li, Kwai Hei [1 ,2 ,3 ]
机构：
[1] Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Com, Minist Educ, Shenzhen 518055, Peoples R China
[3] Southern Univ Sci & Technol, Engn Res Ctr Three Dimens Integrat Guangdong Prov, Shenzhen 518055, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Photoconductivity; Microsensors; Light emitting diodes; Ethanol; Containers; Current measurement; Time factors; GaN; full-angle detection; optoelectronic integration; microsensor; TILT SENSOR; INCLINOMETER;
D O I：
10.1109/LED.2022.3148232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of a miniature III-nitride angle sensor is demonstrated. A monolithic device composed of a light emitter and four detectors is fabricated on a GaN-on-sapphire wafer. By integrating the device with a glass cylindrical container partially filled with ethanol as a liquid pendulum, the on-chip detectors can effectively sense the change of internally reflected light with angle rotation, and produce the photocurrent signals to indicate the angle level. Verified by a series of experimental measurements, the millimeter-sized sensor exhibits full-angle detection capability, sub-second response time, and high repeatability, which makes it well suited for broad practical applications in angle sensing.
引用
收藏
页码：458 / 461
页数：4
相关论文
共 50 条
  • [1] III-Nitride Optochip-in-Sphere for Dual-Axis Angle Detection
    Chen, Tingxuan
    Huang, Ruoyao
    Zhu, Ling
    Li, Kwai Hei
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (08) : 1516 - 1519
  • [2] III-Nitride Microchips for Sugar Concentration Detection
    Chen, Jian
    Yin, Jiahao
    An, Xiaoshuai
    Chen, Liang
    Zhu, Ling
    Li, Kwai Hei
    IEEE SENSORS JOURNAL, 2022, 22 (03) : 2078 - 2082
  • [3] III-Nitride nanowire optoelectronics
    Zhao, Songrui
    Nguyen, Hieu P. T.
    Kibria, Md. G.
    Mi, Zetian
    PROGRESS IN QUANTUM ELECTRONICS, 2015, 44 : 14 - 68
  • [4] Electronic properties of III-nitride materials and basics of III-nitride FETs
    Asbeck, Peter M.
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : 1 - 40
  • [5] III-Nitride Photonics
    Tansu, Nelson
    Zhao, Hongping
    Liu, Guangyu
    Li, Xiao-Hang
    Zhang, Jing
    Tong, Hua
    Ee, Yik-Khoon
    IEEE PHOTONICS JOURNAL, 2010, 2 (02): : 241 - 248
  • [6] III-Nitride Turbidity Microsensor With an Ultrawide Measurement Range
    Chen, Jian
    Yang, Hongying
    Luo, Yumeng
    Lu, Gaofei
    Chen, Zhen
    Tang, Xinke
    Li, Kwai Hei
    IEEE SENSORS JOURNAL, 2024, 24 (12) : 19033 - 19038
  • [7] Defects in III-nitride microdisk cavities
    Ren, C. X.
    Puchtler, T. J.
    Zhu, T.
    Griffiths, J. T.
    Oliver, R. A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (03)
  • [8] Polarization doping for III-nitride optoelectronics
    Khokhlev, Oleg V.
    Bulashevich, Kirill A.
    Karpov, Sergey Yu.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (07): : 1369 - 1376
  • [9] III-Nitride Tunnel Junctions and Their Applications
    Rajan, S.
    Takeuchi, T.
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 209 - 238
  • [10] Photogated transistor of III-nitride nanorods
    Seo, H. W.
    Tu, L. W.
    Chen, Q. Y.
    Ho, C. Y.
    Lin, Y. T.
    Wu, K. L.
    Jang, D. J.
    Norman, D. P.
    Ho, N. J.
    APPLIED PHYSICS LETTERS, 2010, 96 (10)
12345