Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

被引：3

作者：

Harman, J. ^{[1
,2
]}

Kabulski, A. ^{[1
]}

Pagan, V. R. ^{[1
]}

Famouri, P. ^{[1
]}

Kasarla, K. R. ^{[1
,2
]}

Rodak, L. E. ^{[1
]}

Hensel, J. Peter ^{[2
]}

Korakakis, D. ^{[1
,2
]}

机构：

[1] W Virginia Univ, Lane Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA

[2] Natl Energy Technol Lab, Morgantown, WV 26507 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 04期

关键词：

D O I：

10.1116/1.2958253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d(33) of the 150-1100 nm films also depends on the dc bias applied to the samples. (C) 2008 American Vacuum Society.

引用

页码：1417 / 1419

页数：3

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