Effect of Oxygen/Argon Flow Ratio on the Optical Properties of RF Sputtered a-GaInZnO Thin Film

被引：0

作者：

Thakur, Anup ^{[1
,3
]}

Kang, Se-Jun ^{[2
]}

Baik, Jae Yoon ^{[1
]}

Lee, Ik-Jae ^{[1
]}

Lee, Han-Koo ^{[1
]}

Park, Jaehun ^{[1
]}

Shin, Hyun-Joon ^{[1
,2
]}

机构：

[1] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[3] Punjabi Univ, UCoE, Patiala 147002, Punjab, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

基金：

新加坡国家研究基金会;

关键词：

Transparent semiconducting Oxide; a-GaInZnO; Tauc's plot; TEMPERATURE;

D O I：

10.1063/1.3606055

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transparent oxide semiconductor, a-GaInZnO, thin films were deposited by radio frequency (RF) magnetron sputtering at different oxygen/Argon (O-2/Ar) flow ratio on glass substrates. The effect of oxygen content was studied on the transmittance and optical band gap of these thin films. The average transmittance in the visible region decreased with increase in the oxygen content. The optical band gap also decreased with increase in the oxygen content. With increasing oxygen content, the absorption edge shifted to the longer wavelength due to the decreased Burstein-Moss effect.

引用

页码：709 / +

页数：2

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