Predicted Signatures of the Intrinsic Spin Hall Effect in Closed Systems

被引:3
作者
Valin-Rodriguez, Manuel [1 ]
机构
[1] Govern Illes Balears, Conselleria Educ & Cultura, Palma De Mallorca 07004, Spain
关键词
SPINTRONICS; SEMICONDUCTORS;
D O I
10.1103/PhysRevLett.107.266801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the (z) over cap -axis spin projection. This effect does not require any driving electrical field and is inherent to the spin-orbit interactions present in semiconductor materials. Therefore, it should manifest in both closed and open systems. An experiment is proposed to observe the intrinsic spin Hall effect in the far infrared absorption of an asymmetric semiconductor nanostructure.
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页数:5
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