High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach

被引：2

作者：

Lee, Yi-Che ^{[1
]}

Kim, Hee-Jin ^{[1
]}

Zhang, Yun ^{[1
]}

Choi, Suk ^{[1
]}

Dupuis, Russell D. ^{[1
]}

Ryou, Jae-Hyun ^{[1
]}

Shen, Shyh-Chiang ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN/InGaN; MOCVD; electrical properties; bipolar transistor; HIGH-CURRENT GAIN; OPERATION; VOLTAGE; INGAN; HBTS;

D O I：

10.1002/pssc.200983555

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report high performance npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that was directly grown on sapphire substrates with high common-emitter current gain (>40) at collector current density (J(C)) > 5 kA/cm(2). A study on the emitter sizing effect shows that the perimeter-dependent recombination current density changes from 1.5x10(-6) to 6.1x10(-4) A/cm as J(C) increases from 5 A/cm(2) to 100 A/cm(2). The fabricated multi-fingered DHBTs show similar surface recombination current density and a current gain of > 23 at J(C) > 100 A/cm(2) is also achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：4

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