High-density MIM capacitors (∼ 85 nF/cm2) on organic substrates

被引：2

作者：

Liao, EB ^{[1
]}

Guo, LH ^{[1
]}

Kumar, R ^{[1
]}

Lo, GQ ^{[1
]}

Balasubramanian, N ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117865, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 12期

关键词：

metal-insulator-metal (MIM) capacitor; organic substrate; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC); wafer transfer;

D O I：

10.1109/LED.2005.859618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density similar to 85 nF/cm(2) was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (similar to 2.2 ppm/v(2)) and temperature coefficient (similar to 38 ppm/degrees C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.

引用

页码：885 / 887

页数：3