Investigation of the Two-State Current Conduction Mechanism in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate

被引：3

作者：

Chiang, Jung-Chin ^{[1
]}

Hwu, Jenn-Gwo ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Taipei 10764, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 12期

关键词：

OXIDE; TRAPS;

D O I：

10.1149/2.042112jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In the high-k/SiO2 stacked dielectric MOS capacitor, it is believed that the electrons captured by the defects associated with the oxygen vacancies formed in high-k dielectric preparation may affect the trap-assisted tunneling current of the device. In this work, high bandgap material was utilized as substrate for its considerable interface states which are important to enhance the effect of trapped charges on the tunneling current. It was found that the electrons captured in high-k/SiO2 interface layer were crucial to block the current conduction path. Two-state current behavior was clearly observed and investigated by this mechanism. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.042112jes] All rights reserved.

引用

页码：G237 / G241

页数：5

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