Investigation of the Two-State Current Conduction Mechanism in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate

被引：3
|
作者：
Chiang, Jung-Chin [1 ]
Hwu, Jenn-Gwo [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Taipei 10764, Taiwan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 12期
关键词：
OXIDE; TRAPS;
D O I：
10.1149/2.042112jes
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In the high-k/SiO2 stacked dielectric MOS capacitor, it is believed that the electrons captured by the defects associated with the oxygen vacancies formed in high-k dielectric preparation may affect the trap-assisted tunneling current of the device. In this work, high bandgap material was utilized as substrate for its considerable interface states which are important to enhance the effect of trapped charges on the tunneling current. It was found that the electrons captured in high-k/SiO2 interface layer were crucial to block the current conduction path. Two-state current behavior was clearly observed and investigated by this mechanism. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.042112jes] All rights reserved.
引用
收藏
页码：G237 / G241
页数：5
相关论文
共 50 条
  • [31] Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
    H. Bencherif
    F. Pezzimenti
    L. Dehimi
    F. G. Della Corte
    Applied Physics A, 2020, 126
  • [32] Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
    Bencherif, H.
    Pezzimenti, F.
    Dehimi, L.
    Della Corte, F. G.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (11):
  • [33] Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC
    Zhao, Feng
    Islam, Mohammad M.
    Chandrashekhar, M. V. S.
    Sudarshan, Tangali S.
    B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 2010, 1246
  • [34] Investigation of carbon contaminations in SiO2 films on 4H-SiC(0001)
    Schuermann, Mark
    Dreiner, Stefan
    Berges, Ulf
    Westphal, Carsten
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [35] The investigation of 4H-SiC/SiO2 interfaces by optical and electrical measurements
    Ishida, Y
    Takahashi, T
    Okumura, H
    Jikimoto, T
    Tsuchida, H
    Yoshikawa, M
    Tomioka, Y
    Midorikawa, M
    Hijikata, Y
    Yoshida, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1013 - 1016
  • [36] Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers
    Reddy, Vudumula Pavan Kumar
    Kotamraju, Siva
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 80 : 24 - 30
  • [37] 4H-SiC MOSFETs using thermal oxidized Ta2Si films as high-k gate dielectric
    Pérez-Tomás, A
    Godignon, P
    Mestres, N
    Montserrat, J
    Millán, J
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 713 - 716
  • [38] Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures
    Chanthaphan, Atthawut
    Hosoi, Takuji
    Mitani, Shuhei
    Nakano, Yuki
    Nakamura, Takashi
    Shimura, Takayoshi
    Watanabe, Heiji
    APPLIED PHYSICS LETTERS, 2012, 100 (25)
  • [39] Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates
    Hosoi, Takuji
    Uenishi, Yusuke
    Mitani, Shuhei
    Nakano, Yuki
    Nakamura, Takashi
    Shimura, Takayoshi
    Watanabe, Heiji
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 605 - +
  • [40] Effect of Postoxidation Annealing on High Temperature Grown SiO2/4H-SiC Interfaces
    Moon, Jeong Hyun
    Yim, Jeong Hyuk
    Seo, Han Seok
    Lee, Do Hyun
    Song, Ho Keun
    Heo, Jaeyeong
    Kim, Hyeong Joon
    Cheong, Kuan Yew
    Bahng, Wook
    Kim, Nam-Kyun
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (02) : H196 - H201
12345