Analysis of pattern collapse of ArF excimer laser resist by direct peeling method with atomic force microscope tip

Quantitative analysis of the collapse property of dot resist pattern formed by ArF excimer laser lithography ranging from 141 to 405 rim diameter and 360 nm height is demonstrated experimentally. By directly applying a load to a top corner of the resist pattern with a microcantilever tip, a resist dot pattern adhering on a substrate can be collapsed easily accompanying slight residue formation. The load required for pattern collapse decreases with decreasing pattern diameter. In combination with an analysis of the internal stress distribution in the resist pattern, destruction mechanisms and the diameter dependency of pattern collapse can be clarified. (C) 2001 Elsevier Science BY. All rights reserved.