Surface roughness of molecular resist for EUV lithography

被引：7
作者：
Toriumi, Minoru [1 ]
Kaneyama, Koji [1 ]
Kobayashi, Shinji [1 ]
Itani, Toshiro [1 ]
机构：
[1] Semicond Leading Edge Technol Inc, Lab Interdisciplinary Sci & Technol, Onogawa 16-1, Tsukuba, Ibaraki 3058569, Japan
来源：
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2 | 2008年 / 6923卷
关键词：
surface roughness; LER; resist; molecular resist; AFM; EUV lithography;
D O I：
10.1117/12.772349
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface roughness of molecular and polymer resists were probed with an atomic force microscope (AFM) and analyzed using the power spectrum density (PSD) function. The PSD curve obtained from AFM image of the molecular resist showed a broad profile dependent on the exposure dose and small roughness. The PSD increased more in the low spatial frequency range after the exposure and the correlation length was increased. Meanwhile, the PSD of the polymer resist showed a narrow profile with respect to the dose and large roughness. Overall increase in PSD with respect to the spatial frequency was observed after the exposure.
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页数：8
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